收藏本站
Si3442CDV
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
? TrenchFET ? Power MOSFET
I D (A)
V DS (V)
20
R DS(on) ( ? ) Max.
0.027 at V GS = 10 V
0.030 at V GS = 4.5 V
0.049 at V GS = 2.5 V
8 d
7.5
6.1
a
Q g (Typ.)
4.3 nC
? 100 % R g and UIS Tested
? Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
TSOP-6
Top V ie w
? DC/DC Converters
? Boost Converters
? Load Switch
D
1
6
D
D
(1, 2, 5, 6)
3 mm D
2
5
D
Marking Code
BE
XXX
G
3
4
S
Lot Tracea b ility
and Date Code
G
Part # Code
(3)
2. 8 5 mm
(4)
Orderin g Information:
Si3442CD V -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
20
± 12
8 d
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
6.6
6.5 a, b
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Avalanche Current
Single Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
5.2 a, b
20
2.2
1.4 a, b
8
3.2
A
mJ
T C = 25 °C
2.7
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
1.7
1.7 a, b
W
T A = 70 °C
1.1 a, b
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a, c
Maximum Junction-to-Foot (Drain)
t ? 5s
Steady State
R thJA
R thJF
61
38
74
46
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 120 °C/W.
d. Package limited
Document Number: 62654
S12-0976-Rev. A, 30-Apr-12
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI3443BDV-T1-GE3 MOSFET P-CH 20V 3.6A 6-TSOP
SI3443CDV-T1-GE3 MOSFET P-CH 20V 5.97A 6TSOP
SI3443DVTRPBF MOSFET P-CH 20V 4.4A 6-TSOP
SI3443DV MOSFET P-CH 20V 4A SSOT-6
SI3445DV-T1-GE3 MOSFET P-CH 8V 6-TSOP
SI3454ADV-T1-GE3 MOSFET N-CH 30V 3.4A 6TSOP
SI3455ADV-T1-GE3 MOSFET P-CH 30V 2.7A 6TSOP
SI3457BDV-T1-GE3 MOSFET P-CH 30V 3.7A 6-TSOP
相关代理商/技术参数
SI3442DV 功能描述:MOSFET SSOT6 SINGLE NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3442DV-T1 功能描述:MOSFET 20V 4.0A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3443BDVT1 制造商:VISHAY 功能描述:New
SI3443BDV-T1-E3 功能描述:MOSFET 20V 4.4A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3443BDV-T1-GE3 功能描述:MOSFET 20V 4.7A 2.0W 60mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3443CDV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET
SI3443CDV-T1-E3 功能描述:MOSFET 20V 4.7A 3.2W 60mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3443CDV-T1-GE3 功能描述:MOSFET 20V 4.7A 3.2W 60mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube